Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/29110
Title: In2S3/SnO2 Heterostructure for Advanced Asymmetric Solid State Supercapacitor Application
Authors: Masooma Nawaz
Keywords: Chemistry
Issue Date: 2024
Publisher: Quaid I Azam University Islamabad
Abstract: By the industrial revolution the consumption of energy resources has increased tremendously and is essentially required for all forms of economic activities. Therefore, the research focus of scientists is diverting towards the production and storage of renewable energy resources. In energy storage technology, supercapacitors are of special interest as it can bridge the gap between conventional capacitors and batteries. High power density, quick charging, and discharging ability and extended operating life are all the demands of a storage device that electrochemical supercapacitors can meet with great efficiency. However, the low energy density of these devices prevents their applications on a wide scale. Among different solutions to this problem, designing heterostructured electrode material is essential for improving energy density of supercapacitors. Herein, a facile hydrothermal method was employed to synthesized heterostructure SnO2/In2S3 and employed it as supercapacitor material. The synthesized material was characterized using X-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM). The electrochemical evaluation was performed using cyclic voltametry (CV), galvanostatic charge discharge (GCD) and electrochemical impedance spectroscopy (EIS). Solid state Asymmetric device of In2S3/SnO2 was assembled using polyvinyl alcohol (PVA)/KOH gel as a solid electrolyte with extended potential window of 1.6V and specific capacity of 90.6mAh/g at 1A/g current density with 98% of capacity retention after 6000 cycles and columbic efficiency stable at 99%. ASC device achieved high specifc energy of 80 Whkg-1 with the specific power of 800 Wkg-1 corresponding to the current density of 1 A/g. SnO2 is a suitable material with better electrochemical, while the efficiency was improved by forming its heterostructure with In2S3. The electrochemical results revealed that the constructed ASC device has better storage property and have potential for commercial use.
URI: http://hdl.handle.net/123456789/29110
Appears in Collections:M.Phil

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